| 摘要 |
The transistor described consists of a parallel-circuit arrangement of individual transistor cells (41, 42) for power division. In order to isolate automatically the defective cells, fuse-type sections (6, 7) are provided, which in the event of a short circuit isolate the said cells from the remainder. A voltage-controlled switch (9) is provided to improve the isolation provided by the basic fuse-type section (7). |
