发明名称 ION BEAM APPARATUS AND METHOD OF MODIFYING SUBSTRATES
摘要 <p>An ion beam apparatus is used to detect and repair under constant control the defects of a substrate. To that effect, the ion beam apparatus includes a mask (4) arranged in the path of the rays after the ion source (1) and presenting a perforation (5), preferably a round opening. A controllable lens (6) is provided between the ion source (1) and the mask (4) to modify the angle ε with which the ion beam leaves the ion source (Fig. 1)</p>
申请公布号 WO1987001865(A1) 申请公布日期 1987.03.26
申请号 AT1986000053 申请日期 1986.09.10
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