| 摘要 |
<p>An improved integrated circuit structure is disclosed comprising bipolar and/or MOS devices formed on the same substrate. Bipolar devices, when present, have at least the emitter and the collector contact portions formed from a polysilicon layer which results in raised contacts. The MOS devices are similarly formed with raised gate contact portions formed from the same polysilicon layer. Metal silicide is formed over at least a portion of the base, source, and drain regions to provide conductive paths to the base, source, and drain contacts. In one embodiment, the base, source, and drain contacts are also raised contacts formed from the same polysilicon layer to permit formation of a highly planarized structure with self-aligned contacts formed by planarizing an insulating layer formed over the structure sufficiently to expose the upper surface of the contacts. </p> |
