| 摘要 |
The invention relates to an improved readout circuit and readout method for an IR sensing array. The invention, given a limited time interval for reading out the signal from a sensor element in an array of sensor elements, permits a longer time to be devoted to the injection of charges into the substrate, thereby reducing device "lag" (the retention of uninjected charges). The readout is carried out by a two step, direct coupled, injection process. The first step involves independent, but simultaneous resetting of the sensor elements and the preamplifier input (at a node having sufficient capacity to supply the charges required for injection). The voltages are suitable for IR induced charge storage in the sensor elements, and for subsequent injection by the nodal capacity. A first sample is taken by a correlated double sampling circuit from the preamplifier output during the first step as the resetting stabilizes. In the second step, the selected sensor element is connected to the preamplifier input to cause the charge injection. At the same time the preamplifier is responding to the charge transfer. The second sample is taken from the preamplifier output at the end of injection. The reduction in lag over conventional AC coupled readout circuits is 80%.
|
