| 摘要 |
<p>PURPOSE:To improve the performance of a drive circuit substrate and simplify a manufacturing process by a method wherein transparent conductive films are employed as a source electrode and a drain electrode and foundation patterns such as a gate electrode and an address wiring are utilized as photomasks for backplane exposure. CONSTITUTION:After an address wiring 2 and a gate electrode 21 are formed on a substrate 1, an insulating film 3 is deposited. Then a transparent conductive film 4 such as an ITO film is deposited and successively an N<+> type amorphous Si film 5 is deposited. After a negative type photoresist is applied, the backplane of the insulating substrate 1 is exposed to form a photoresist pattern 6 with the gate electrode 21 and the address wiring 2 as masks and the N<+> type layer 5 and the transparent conductive film 4 are processed. Then, a semiconductor thin film layer 7 made of amorphous Si and an insulating film 8 are successively deposited and an island pattern composed of the insulating film 8 and the semiconductor thin film 7 is formed by a photoresist. Then a photoresist 9 is formed and a source electrode 41 and a drain electrode (picture element electrode) 42 are formed from the transparent conductive film 4 by etching.</p> |
