发明名称 |
Method of forming electrode pattern of semiconductor device |
摘要 |
A method of forming an electrode pattern on a surface of a semiconductor substrate which comprises the steps of forming a metal film which is vulnerable to a reactive ion etching on a surface of the semiconductor substrate, forming on the metal film another metal film which is vulnerable to an ion milling but is resistant to the reactive ion etching, forming a resist pattern on the another metal film, selectively etching the another metal film by the ion milling using the resist pattern as a mask, and selectively etching the metal film by the reactive ion etching using the another metal film as a mask. A semiconductor device having an electrode pattern as formed by the above method is also disclosed.
|
申请公布号 |
US4650543(A) |
申请公布日期 |
1987.03.17 |
申请号 |
US19850706617 |
申请日期 |
1985.02.28 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
KISHITA, YOSHIHIRO;FURUKAWA, MOTOKI;MITANI, TATSURO |
分类号 |
H01L21/28;H01L21/3213;H01L21/338;H01L29/47;(IPC1-7):C23F1/02;B44C1/22;C03C15/00;C03C25/06 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|