| 摘要 |
PURPOSE:To inexpensively form a semiconductor device and to prevent its electric characteristics from being deteriorated by forming the second metal layer which mainly contains gold and the fifth metal layer which mainly contains tin and copper. CONSTITUTION:Since a tin-copper alloy (the fifth metal layer 16) is used as a brazing material, its cost becomes 1/10 or lower. A problem that a local battery is formed between tin, copper (the fifth metal layer 16) and nickel (the fourth metal layer 13) is eliminated to improve the quality. When the structure of a vanadium layer (the third metal layer 12), a nickel layer (the fourth metal layer 13) and a tin-copper alloy layer (the fifth metal layer 16) is formed, the copper of the tin-copper alloy layer is diffused in a silicon substrate to become an acceptor to deteriorate electric characteristics such as VBCF of an N-P-N transistor, but a gold-antimony alloy layer (the second metal layer 17) is formed, the antimony of the alloy layer is diffused in the substrate 1 to become a doner impurity to cancel the effect of the acceptor of the copper-the impurity to prevent the electric characteristics of the transistor from being deteriorated.
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