| 摘要 |
1,143,788. Homogenous crystals. PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd. 28 Feb., 1966 [27 Feb., 1965], No. 8672/66. Heading C1A. [Also in Division H1] The homogeneity of a crystal of a compound which contains inclusions is improved by heating the crystal in a closed container which also contains either a mixture of the compound and one or more of the component elements or a non-stoichiometric form of the compound, and repeating the treatment at least once using a mixture or compound which is richer in one of the other component elements. Thus with ZnTe, the crystal may be heated with ZnTe + Te then ZnTe+Zn, or with Te-rich ZnTe then Zn-rich ZnTe (Fxl). The homogenous crystal so produced is non-stoichiometric, and mixtures of 2 such materials may be heated together to give a compound of different stoichiometry, or may be used to heat a further crystal. Thus, compositions of MnSb 2 , containing respectively 48À5 and 49À2 at. % Sb, may be heated together in various proportions with a crystal of MnSb 2 . The free space may be filled with inert powder, liquid, or gas. A chemical transport agent may also be present. Also referred to are Cr 3 Tc 4 A<SP>III</SP> B<SP>V</SP> compounds where A<SP>III</SP> is Al, Ga, or In, and B<SP>V</SP> is P, As, or Sb, A<SP>II</SP> B<SP>VI</SP> compounds where A<SP>II</SP> is Zn, Cd, or Hg, and B<SP>VI</SP> is S, Se, or Te, CrSb, FeSb, CoSb, NiSb, SnSe, SnS, CdIn 2 S 4 , and AgSbTe 2 . |
