| 摘要 |
PURPOSE:To contrive the prevension of the reduction in integration due to the simplification of process and bird beaks by a method wherein a recess is formed at a required region of a semiconductor substrate, and a thick thermal oxide film is formed over the surface; thereafter, a glass layer is deposited on the thermal oxide film, and the recess is filled with the thermal oxide film by removal of the glass layer and the thermal oxide film. CONSTITUTION:The surface of the P type Si semiconductor substrate 11 is coated with a thin Si film 12, which is then selectively coated with a thick photoresist film 13. The recess 14 is formed by anisotropically etching the substrate 11. The recess 14 is completely filled with a thick thermal oxide film 16 by forming this film 16 over the surface of the substrate 11. The glass layer 18 is deposited on this film 16 by the spin-on method. Thereafter, the glass layer 18 is changed into an oxide film by baking in a steam atmosphere. The recess 14 is filled with the thermal oxide film 16 by equal removal of the glass layer 18 and the film 16 by ion etching. Thus, the prevention of the reduction in integration due to the simplification of process and bird beaks is contrived. |
