| 摘要 |
PURPOSE:To reduce an internal stress generated in a film and prevent the film from peeling off from a substrate by a method wherein mixed gas of Si2H6 and GeH4 is employed as material gas for an amorphous SiGe film and the ratio of GeH4/(Si2H6+GeH4) is specified. CONSTITUTION:Si2H6 and GeH4, or those which are diluted with H2, He or the like are mixed to have the ratio of GeH4/(Si2H6+GeH4) 0.1-0.4 and this mixed gas is employed to form an amorphous SiGe film, which is employed in an amorphous solar battery, by glow discharge. The compressive stress of a conventional amorphous SiGe film is more than 2X10<9>dyne/cm<2> when Ge concentration is about 40at% or less. On the other hand, in the present embodi ment, the compressive or tensile stress is as small as 1X10<9>dyne/cm<2> or less when Ge concentration (wherein a band gap is 1.8-1.6eV) is 10-40at%. When the dark current conductivities and the photoconductivities of these two types of films are compared at the same optical gap, almost no differences are found and these two films have the same film quality level. |
