| 摘要 |
PURPOSE:To obtain the titled body having an excellent reproducibility and stability by providing an amorphous silicon photoconductive layer having a specific absorption coefficient ratio of an infra-red ray, and contg. a boron, a hydrogen and a fluorine atoms in the titled body. CONSTITUTION:The titled body comprises the amorphous silicon photoconductive layer contg. 0.02-2ppm the boron atom and the hydrogen and the fluorine atoms and having >=1.3 the absorption coefficient ratio of the absorption peak at a wave number of 827cm<-1> and 1,015cm<-1> of the infra-red ray absorption spectrum. The a-Si:H: F film displays the absorption peak of showing a Si-H binding state at the wave number of about 1,900-2,100cm<-1> measured by the infra-red absorption spectrum and also displays the absorption peaks of showing a Si-F binding state at the wave number of 827cm<-1> which shows a SiF2 binding and at the wave number of 1,015cm<-1> which shows a SiF3 binding respectively. Therefore, the ratio of each absorption coefficients alpha(827) and alpha(1,015), namely alpha(827)/alpha(1,015) makes a standard of showing the binding state of the fluorine atom. The ratio of alpha(827)/alpha(1,015) has greatly effects upon the electrophotographic characteristics. When the SiF3 binding is less in the prescribed a silicon photoconductive layer, the titled body having the excellent photosensitivity and the dark resistance is obtd. |
