发明名称 BONDING WIRE FOR SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent wires from being disconnected by composing the wirings of copper or copper alloy extrafine wire on the surface of which is formed an oxide film of specific average layer thickness. CONSTITUTION:An oxide film is formed in average layer thickness of 50-300Angstrom on the surface of Cu or Cu alloy extrafine wires. More concretely, the extrafine wires of 25mum are continuously annealed in Ar gas prepared in the prescribed oxygen density in a range of 0.01-0.1% to form the oxide film on the surface. Thus, the wires are not is contact with each other, can be smoothly fed to eliminate the disconnection of the wires and to further improve the bondability of the bonding portion inexpensively.
申请公布号 JPS6230359(A) 申请公布日期 1987.02.09
申请号 JP19850169240 申请日期 1985.07.31
申请人 MITSUBISHI METAL CORP 发明人 IKEDA HIROSHI;HOSODA NAOYUKI;ONO TOSHIAKI
分类号 C23C8/10;C23C8/16;H01L21/60;H01L23/48 主分类号 C23C8/10
代理机构 代理人
主权项
地址
您可能感兴趣的专利