| 摘要 |
PURPOSE:To prevent large changes in current consumption of a semiconductor integrated circuit having high temperature dependability even if the temperature of a semiconductor substrate changes by changing the voltage which is supplied from an internal source voltage supply circuit in accordance with the temperature. CONSTITUTION:An internal power source circuit 14, many RAM cells 16, etc., are provided on the same substrate of a one-chip RAM10, and with increase in temperature of said substrate, the supply voltage from the circuit 14, which has an N-MOS transistor, etc., whose threshold level has temperature dependability and decrease with increase in temperature to the cells 16 which forms a semiconductor integrated circuit having high temperature dependability is decreased. Thus, the change of current consumption in the cells 16 is suppressed, and even if the semiconductor substrate temperature changes, the current consumption of the semiconductor integrated circuit having high a temperature dependability is hardly changed. |
