A buried type semiconductor laser device.

摘要

A buried type semiconductor laser device comprises a multi-layered epitaxial growth crystal including a striped laser-oscillation operating area on a semiconductor substrate (1), wherein said laser-oscillation operating area contains a buffer layer (2) having the same polarity as said substrate, an active layer (3) and a cladding layer (4) having a polarity different from that of said substrate, said laser-oscillation operating area being sandwiched between one part of a burying layer (5) and another part of the burying layer, which are disposed on said substrate and which have a polarity different from that of said substrate,through said substrate (1) or a diffusion region having an impurity with the same polarity as said substrate so as to electrically isolate said burying layer (5) from said cladding layer (4), thereby maintaining ineffective current flowing from said cladding layer to said burying layer at a low level even when current injected into said device is increased.