发明名称 |
PROCESS FOR FORMING LARGE TO SINGLE CRYSTAL RIBBONS OF SEMICONDUCTOR MATERIAL |
摘要 |
<p>The invention provides a process for the manufacture of coarsely crystalline to monocrystalline sheets and/or plates of semiconductor material of preferred orientation. A meniscus of molten semiconductor material comes in contact with a moving, cooler substrate of the same coarsely crystalline to monocrystalline semiconductor material, during which, while transferring the preferred orientation, a thin sheet of the semiconductor material is pulled onto the substrate and, after cooling, becomes detached from the substrate. The substrate can be reused as often as desired.</p> |
申请公布号 |
EP0072565(B1) |
申请公布日期 |
1987.03.04 |
申请号 |
EP19820107466 |
申请日期 |
1982.08.17 |
申请人 |
HELIOTRONIC FORSCHUNGS- UND ENTWICKLUNGSGESELLSCHAFT FUR SOLARZELLEN-GRUNDSTOFFE MBH |
发明人 |
GEISSLER, JOACHIM, DIPL.-ING.;HELMREICH, DIETER, DR. DIPL.-ING. |
分类号 |
C30B15/00;C30B15/06;C30B15/36;C30B29/64;C30B33/00;H01L21/02;H01L21/208;H01L31/18;(IPC1-7):C30B15/06 |
主分类号 |
C30B15/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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