| 发明名称 |
Ion implanted polydiacetylenes |
| 摘要 |
Ion implanted polydiacetylenes prepared by implanting ions into substituted polydiacetylenes at fluence levels from about 1x1013 ions/cm2 to about 1x1017 ions/cm2 are disclosed. Ion implanted polydiacetylenes exhibit electrical and/or optical properties which are different from those of untreated polydiacetylenes.
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| 申请公布号 |
US4647403(A) |
申请公布日期 |
1987.03.03 |
| 申请号 |
US19840630484 |
申请日期 |
1984.07.13 |
| 申请人 |
GTE LABORATORIES INCORPORATED |
发明人 |
ELMAN, BORIS S.;SANDMAN, DANIEL J.;TRIPATHY, SUKANT K.;THAKUR, MRINAL K. |
| 分类号 |
C08F8/00;C08L49/00;H01B1/12;H01L51/30;(IPC1-7):H01B1/06 |
主分类号 |
C08F8/00 |
| 代理机构 |
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代理人 |
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| 地址 |
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