| 摘要 |
<p>PURPOSE:To improve the operating characteristics and the reliability of the device by insulating between a transparent electroconductive film (a ITO film) composed of a picture element electrode and a thin film transistor (TFT), thereby preventing a reaction of the ITO film and the metallic film. CONSTITUTION:The TFT comprises a gate electrode 11, a gate insulating film 12, a semiconductor film 13, a source electrode 18 and a drain electrode 19. The drain electrode 19 is connected with the ITO film 15 of the picture element electrode. The reaction of the film 15 and an Al-Si film 17 of the drain electrode is prevented by lying a P-dopped a-Si film at a junction point of the electrode 19, the film 13 and the film 15, thereby giving an ohmic contact. The indium contd. in the film 15 does not diffuse in the semiconductor film by lying a silicon nitride film 14 between the films 13 and 15, thereby preventing the generation of a deterioration of the TFT characteristics. Thus, the thin film type transistor active matrix liquid crystal display device having the good operation characteristics and the high reliability is obtd.</p> |
