| 摘要 |
PURPOSE:To enable the manufacture of blue light emitting elements of high intensity and high efficiency with good reproducibility in a mass production by forming a low resistance N-type ZnSySe1-y layer on a single crystal substrate by an MOCVD method using an organic zinc compound synthesized by a prescribed method as a zinc source, and laminating an insulating layer and electrodes thereon. CONSTITUTION:After a mixture which contains excess (1.05-1.2 equivalent ratio) of low boiling point component of R1Zn and R2Se (where R is alkyl group of CH3, etc.) is thermally reacted at 0-40 deg.C for 10-180min, matured at 30-80 deg.C for 10-120min, excess component is distilled, and removed to obtain an organic zinc compound. A low resistance N-type ZnSySe1-y is formed on a single crystal substrate made of GaAs by an MOCVD method by organic zinc compound, carrier gas (He or H2), trienthyl aluminum gas, hydrogen sulfide, or hydrogen selenide. Then, an insulating layer of SiO2 or Si3N4, an Au layer, electrodes of ITO layer are formed thereon to obtain an element for emitting blue light with an MIS structure. |
