| 摘要 |
PURPOSE:To obtain a preferable heat sink and airtight semiconductor device by using a glass having low specific dielectric constant for a substrate, and a sealing glass of a cap, and increasing the distances between metal leads and the substrate, and between the leads and the cap. CONSTITUTION:A substrate 11 uses sintered SiC or AlN having 0.06cal/cm sec. deg.C or higher of thermal conductivity, 34m104u-6-6X10<-6>/ deg.C of thermal expansion coefficient, and an oxide film which contains Al, Si, P, B, Ge, As, Sb, Bi, V, Zn, Cd, Pb, Na, K, Li, Be, Ca, Mg, Ba, Sr, Ze or one of their compounds is attached to the substrate. Distances between the substrate and metal leads 13 and between the leads 13 and a cap 14 are held 0.05-2.0 and more preferably 0.2-1mm, and they are sealed with glass 15. The glass has 4-10 of specific dielectric constant, 10<8>OMEGA.cm of specific resistance, 3.5-10<-6>-5.2-10<-6>/ deg.C of expansion coefficient, and is sealed at 350-550 deg.C. This device is sealed at the substrate having high thermal conductivity and thermal expansion coefficient near an Si wafer with glass having low specific dielectric constant to provide high reliability. |
