| 摘要 |
PURPOSE:To obtain an infrared laser light detector having a sensitivity characteristic only for light in the vicinity of a wavelength of 1mum by providing an optical conductor layer beneath a film wherein a nonlinear optical material which converts infrared laser light into the higher harmonic wave of visible light into a macromolecular compound. CONSTITUTION:An insulating substrate 1 comprises glass, plastics, ceramics and the like. A good conductor 2 comprising aluminum and the like is formed on the substrate by evaporation and the like as an electrode. A semiconductor layer 3 is formed thereon. Said semiconductor has a light conducting property. In this layer, CdS-Se and the like which have high sensitivity especially in the vicinity of a wavelength of 0.53mum are used. A spacer layer 4 has a transparent electrode. The spacer layer 4 is formed on the lower surface of glass and the like by ITO evaporation and the like as an upper layer. A wavelength converting film 5 wherein a nonlinear optical material is mixed in a macromolecular compound is formed as an upper layer. As the nonlinear optical material, KDP.KTP.LiNO3 and the like of inorganic ferroelectric crystals are available. |
