| 发明名称 |
SEMICONDUCTOR DEVICE FREE FROM CURRENT LEAKAGE |
| 摘要 |
An improved semiconductor device is disclosed which is free from current leakage due to pin-holes or other gaps. Also an improved method for processsing a semiconductor device is shown. According to the invention, gaps produced in fabricating process of the semiconductor layer are filled with insulator in advance of deposition of electrodes. |
| 申请公布号 |
AU6178186(A) |
申请公布日期 |
1987.02.26 |
| 申请号 |
AU19860061781 |
申请日期 |
1986.08.22 |
| 申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO. LTD. |
发明人 |
SHUNPEI YAMAZAKI;KUNUO SUZUKI;MIKIO KINKA;TAKESHI FUKADA;MASAYOSHI ABE;IPPEI KOBAYASHI;KATSUHIKO SHIBATA;MASATO SUSUKIDA;SUSUMU NAGAYAMA;KAORU KOYANAGI |
| 分类号 |
H01L27/142;H01L31/0216;H01L31/20 |
主分类号 |
H01L27/142 |
| 代理机构 |
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