| 摘要 |
An insulated-gate field-effect transistor exhibits a channel region, two regions with high impurity density on both sides of the channel region, the regions being formed on a substrate. Furthermore, a gate is provided for controlling the channel region through a gate insulation film. In addition, there is an ohmic contact region having high dielectric strength, specifically for one of the regions with high impurity density. The configuration of the part of the region having a high impurity density, which is provided between the ohmic contact region with high dielectric strength and the gate and in which the current flows, comprises at least one sector with the ohmic contact region of high dielectric strength at its crest. <IMAGE>
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