| 摘要 |
PURPOSE:To obtain the titled film having excellent moisture resistance, low coefficient of friction and adhesion and free from thermaldenaturation, by exposing a polytetrafluoroethylene target to a high-speed atomic beam source to form a polytetrafluoroethylene sputtering deposition film on a substrate. CONSTITUTION:An evacuation pump is operated to obtain a degree of vacuum of about 10<-6>Torr. An inert gas such as argon is fed into a high-speed atomic beam sources 9a, 9b to adjust the gas pressure at 10<-3>-10<-4>Torr. A polytetrafluoroethylene (PTFE) target 11 provided within a vacuum container is retrograded (numeral 11 is shown with a dotted line in the figure) so that the target is removed from the high-speed atomic beam radiation passage 10b. A high voltage of about 3kV is applied between the cathodes 4a, 4b and anode 2 of the high-speed atomic beam source 9b to radiate an electrically neutral argon atomic beam 7 through a neutralizing mechanism 6 towards a stainless argon atomic beam 7 through a neutralizing mechanism 6 towards a stainless steel substrate 12, thereby cleaning the surface of the substrate 12. The PTFE target 11 is extruded to set it within the high-speed atomic beam source radiation passage 10a. A high-speed argon atomic beam 7 is radiated from a high-speed atomic beam source 9a to come into collision with the target 11, thereby forming a 0.1mu-thick PTFE sputtering deposition film on the surface of the substrate 12. |
