| 摘要 |
<p>PURPOSE:To enable all the electrodes dispersedly arranged on a substrate to be electrically connected with a connecting electrode body which receives a pressure through a contact electrode plate even if the structure is curved by the bonding between the semiconductor substrate and a support plate, by previously bonding the contact electrode plate to the electrodes. CONSTITUTION:A silicon plate 11 having an uneven surface is provided with gate electrodes 14 and cathode electrodes 15 by means of aluminium vapor deposition. A brazing material 12 mainly composed of aluminium, a support plate 13 and a contact electrode plate 2 are superposed one after another. The support plate 13 is formed of molybdenum or tungsten. When this structure is heat treated, the aluminium is alloyed whereby the silicon plate 11 is bonded to the support plate 13 and the contact electrode plate 2 is welded to the cathode electrodes 15. Even if the silicon plate 11 is curved by the bimetal effect with a connecting electrode body 32 in contact only with the central portion of the contact electrode plate 2, all the cathode electrodes 15 are connected to the electrode body through the contact electrode plate 2. Accordingly, a current density proper to the semiconductor substrate 11 can be obtained with an appropriate clamping pressure.</p> |
