MANUFACTURE OF THIN FILM SEMICONDUCTOR DEVICE

摘要

PURPOSE:To improve the characteristics of TFT by reducing a resistance and improving a contact by subjecting the semiconductor film doped with impurity in source and drain regions to beam annealing. CONSTITUTION:On an insulating substrate 1 of crystal or non-alkali glass, amorphous silicon (a-Si) is deposited as a semiconductor film 2 which is then subjected to beam annealing to be recrystallized. Using a material gas of SiH4 mixed with B2H6 or PH2, P<+> a-Si or N<+> a-Si is deposited as a semiconductor film 3 doped with impurity on the semiconductor film 2. The parts except only source and drain regions of TFT are removed by etching and the semiconductor film 3 is subjected to beam annealing using Ar laser of such energy density that the semiconductor film 2 is not fused. A gate insulating film 4 is formed; a gate electrode 5, a drain electrode 6, and a source electrode 7 are formed.