| 摘要 |
PURPOSE:To obtain a film having excellent adhesive properties by forming first layer amorphous-silicon by using monosilane gas as an argon base and continuously forming second layer amorphous-silicon by employing monosilane gas as an atomic base having small atomic weight. CONSTITUTION:An SiO2 film 2 is formed on a glass substrate 1 with the object of preventing the thermal diffusion of Na or Ka ions and flattening the surface of the substrate, ITO or In2O3 is shaped on the SiO2 film 2, and ITO or In2O3 is patterned to form a transparent electrode pattern 3. The substrate is arranged in a reaction chamber, and a first layer a-Si:H film 4 is deposited through a glow discharge decomposition method by using SiH4 gas as an Ar base first. A second layer a-Si:H film 5 is deposited by using SiH4 gas as an H2 base. The a-Si:H films 5, 4 are patterned. When an upper electrode 6 is formed by aluminum or nickel-chromium, an image sensor for incident beams is manufactured. |
