| 摘要 |
PURPOSE:To decrease thermal damages imparted to an FET and to prevent separation of an amorphous silicon semiconductor layer including impurities, a second insulating film and the like, by specifying the temperature of a sub strate, when the amorphous silicon semiconductor layer including impurities is deposited at 121-190 deg.C. CONSTITUTION:On a glass substrate 1, a gate electrode 2 is deposited. Then, a silicon nitride insulating film 3, an amorphous silicon semiconductor film 41 and a second silicon nitride film 61 are deposited by a high frequency plasma chemical vapor phase deposition method. Thereafter, a part other than required part of the film 61 is removed, and an insulating thin film 6 is obtained. An amorphous silicon semiconductor film 51, which includes phosphorus, is deposited on the entire surface by a high frequency plasma chemical vapor phase method, with the substrate temperature being maintained at 170 deg.C. The layer 41 and the layer 51 are selectively removed, and island shaped semiconductor layers 4 and 52 are formed. Thereafter, source and drain electrodes 7a and 7b are deposited. The layer 52 is selectively removed, and a semiconductor layer 5 is obtained. Thus an FET is obtained. |
