发明名称 |
Semiconductor memory device with a controlled precharging arrangement |
摘要 |
A semiconductor memory device includes: a memory cell constituted by MOSFETs; a bit line for transmitting a writing and a reading information to or from the memory cell therethrough; a writing-in control signal line for controlling the writing operation onto the memory cell; a first conductive type MOSFET with a source thereof being connected to a power supply terminal, with a gate thereof being connected to the writing-in control signal line, and with a drain thereof being connected to the bit line; the first conductive type MOSFET being adapted to charge up the bit line when no writing is performed in the memory cell; a second conductive type MOSFET with first control line thereof being connected to the bit line, with a gate thereof being connected to the writing-in control signal line, and with a second control line thereof being connected to the output terminal of the writing circuit; and the second conductive type MOSFET being adapted to transmit to the bit line an output from the writing circuit.
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申请公布号 |
US4644500(A) |
申请公布日期 |
1987.02.17 |
申请号 |
US19840638677 |
申请日期 |
1984.08.08 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
YONEZU, RYO;SAKASHITA, KAZUHIRO |
分类号 |
G11C11/417;G11C7/12;G11C11/41;G11C11/412;G11C11/419;H01L27/10;(IPC1-7):G11C13/00 |
主分类号 |
G11C11/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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