| 摘要 |
PURPOSE:To remove completely a resist film which has been used as a mask, by laminating a film of the same material as a protective film which is laminated in the subsequent process, on the upper magnetic layer, and forming the resist film of a prescribed shape for a mask, on said layer. CONSTITUTION:The lower magnetic layer 2, a gap layer 3, the lower insulating layer 4, a thin film coil 5, the upper insulating layer 6, and the upper magnetic layer 8 are formed on a substrate 1, and thereafter, and an intermediate layer 11 consisting of an SiO2 film of the same material as a protective film 13 which is laminated and formed in the subsequent process is formed on the whole surface of the upper part of the layer 8. Also, a resist film 12 being a mask use film is applied onto this layer 11, and thereafter, this film 12 is formed to a prescribed pattern. Moreover, an intermediate layer film 11B except the lower part of the film 12, and its under layer 8 are removed by dry etching by using the film 12 as a mask, and also the film is brought to etching to the extent that it is removed simultaneously and completely. Furthermore, an SiO2 film is formed as the film 13 on the layer on which an intermediate layer 11A remains. According to this method, the resist film which has been used as the mask can be removed completedly, therefore, no resist film drops down, when driving a device. |
