| 摘要 |
PURPOSE:To obtain the polycrystalline transistor attaining the high driving performance without enhancing an occupation area of a transistor by arranging plural pieces of channels vertically to a substrate. CONSTITUTION:After depositing polysilicon doped with phosphorus on a substrate 1 made of crystal glass and etc., unnecessary parts are etched to form a source region 8. Next, polysilicon is deposited on the source region 8 except the parts which are to take contacts, thereby forming an active region 4. After depositing polysilicon doped with phosphorus on the active region 4, unnecessary parts are etched to form a drain region 7. Then, a gate oxide film 2 is formed by thermal oxidation. A polysilicon layer doped with phosphorus is deposited and a gate electrode 3 is formed. Next, after a protective film 9 made of PSG film is formed, the predetermined parts for the source region 8, the drain region 7, and the gate electrode 3 are exposed. At last, an electrode 6 of aluminum and etc. is formed to complete a polycrystalline silicon transistor. |
