| 摘要 |
PURPOSE:To obtain stable operation as a semiconductor device for a long period of use, by forming external lead wire with gold, and forming at lest a pad part of a wiring layer with aluminum including germanium. CONSTITUTION:In a semiconductor substrate 1, a semiconductor element and a wiring layer, which has a pad part at the free end, are formed. One end of an external lead wire 12 is compressed and welded to the pad part 3' of the wiring layer 2' in the semiconductor device. The external lead wire 12 comprises gold. At least the pad part 3' of the wiring layer 2' comprises aluminum including 0.05-30atom% of germanium. The external lead wire 12 comprising gold is compressed and welded to the pad part 3' including germanium, and the aluminum, the germanium and the gold are made to be alloy. Even if the gold constituting the external lead wire 12 and the aluminum constituting the pad part 3' are readily reacted, the alloy has the germanium, and therefore, the progress of the reaction is suppressed even though the device is used for relatively long time. |
