发明名称 |
Photoconductive member having light receiving layer of A-Ge/A-Si and C |
摘要 |
A photoconductive member is provided which has substrate for photoconductive member and a light-receiving layer having photoconductivity with a layer constitution in which a first layer region (G) comprising an amorphous material containing germanium atoms and a second layer region (S) exhibiting photoconductivity consisting of an amorphous material containing silicon atoms are successively provided from the aforesaid substrate side, said light-receiving layer containing carbon atoms together with a substance (C) for controlling conductivity in a distribution state such that, in said light-receiving layer, the maximum value C(PN)max of the distribution concentration of said substance (c) in the layer thickness direction exists within said second layer region (S) and, in said second layer region (S), said substance (C) is distributed in greater amount on the side of said substrate.
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申请公布号 |
US4642277(A) |
申请公布日期 |
1987.02.10 |
申请号 |
US19840663965 |
申请日期 |
1984.10.23 |
申请人 |
SAITOH, KEISHI;OHNUKI, YUKIHIKO;OHNO, SHIGERU |
发明人 |
SAITOH, KEISHI;OHNUKI, YUKIHIKO;OHNO, SHIGERU |
分类号 |
G03G5/082;(IPC1-7):G03G5/085 |
主分类号 |
G03G5/082 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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