| 摘要 |
For improving the dynamic characteristics of semiconductor components required to absorb high reverse voltages only in one polarity (diodes, reverse-conducting thyristors and asymmetric thyristors), in many cases structures having an n base consisting of two layers are used. In order to improve the reverse-voltage capability, it is proposed, in a semiconductor component having at least one pn-n sequence of layers, to select the thickness (S) and the doping of an n stop layer (4) in such a way that the following applies: <IMAGE> where e=elementary charge, epsilon =dielectric constant of the semiconductor, ND=donor concentration, X=path coordinate, 0.8</=k</=1.0 and En=field strength at the n-n junction. The effect of this measure is that the geometric conditions of the edge chamfering are less stringent. The edge can also be shaped by means of conventional etching processes.
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