| 摘要 |
The invention relates to a solar cell, wherein, in order to increase the efficiency, an amorphous or microcrystalline silicon layer is disposed on the side facing the incident light, thereby enabling the surface recombination speed to be reduced. In a preferred embodiment, this silicon layer is doped and is therefore additionally available for charge carrier transport. High doping effects are thus avoided in the thin surface zone of the semiconductor body.
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