| 摘要 |
PURPOSE:To prevent the operation error due to radiation by increasing a node capacity by forming a capacity between a drain region and a field region in the SRAM using an FF circuit composed of CMOSFET. CONSTITUTION:On an N-type substrate 101, CMOSFETs P11, N11, P12, and N12 are formed. The drain regions 102 and 107 of P11 and N11 are connected with the polysilicon layer 113 composing the gate electrodes of P12 and N12 and the conductor layers led to said gate electrodes through a metallic wiring 120 and the drain regions 105 and 109 of P12 and N12 are connected similarly with a polysilicon layer 112, thereby composing an FF circuit. Gate insulating films 141 and 143 and the polysilicon layers 112 and 113 are extended between a drain region and a field region to form a capacity between the layers 112, 113 and a substrate 101 or a P-well region 132. Then, a node capacity at a node of the FF circuit increases so that the reversal of data de to radiation can be prevented. |
