发明名称 Reactive ion etching deposition apparatus and method of using it.
摘要 <p>The cathode (31) in a reactive ion etching and deposition apparatus is in the form of a single plate having a matrix of cylindrical hollows (37) therein, each hollow producing a hollow cathode glow when the apparatus is energised. The aspect ratio (largest dimension of each hollow cross-section/depth of the hollow) is preferably at least 1.5. In operation of the apparatus, an RF voltage is applied between the cathode and an evacuated chamber in which the cathode is disposed through a suitable matching network. A plasma gas is supplied from a point outside the cathode and a suitable pumping system is used to maintain operating pressures in the 0.1 to 400 millitorr range. </p>
申请公布号 EP0210858(A2) 申请公布日期 1987.02.04
申请号 EP19860305779 申请日期 1986.07.28
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 BUMBLE, BRUCE;CUOMO, JEROME JOHN;LOGAN, JOSEPH SKINNER;ROSSNAGEL, STEVEN MARK
分类号 H05K3/08;C23C14/34;C23F1/04;C23F4/00;H01J37/32;H01L21/302;H01L21/3065 主分类号 H05K3/08
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