SEMICONDUCTOR DEVICE HAVING MULTI-LEVEL INTERCONNECTION STRUCTURE

摘要

A semiconductor device comprises a silicon via-plug within a fine via-hole in direct contact with an inner wall of the via-hole. A metal silicide layer is formed between an interconnection layer and the silicon plug as well as between the silicon plug and a diffused layer formed in a substrate. Shape defects and excessive stresses formed within a fine via-hole are reduced because the via-hole is filled with the silicon plug substantially without a metallic film or a metal silicide film on a sidewall. The metal silicide film is formed by a heat treatment through silicidation reaction.