| 发明名称 |
Magnetoresistance effect film and production process thereof |
| 摘要 |
A magnetoresistance effect film is disclosed. This magnetoresistance effect film comprises a substrate, at least two ferromagnetic thin films stacked one over the other on the substrate with a non-magnetic thin film interposed therebetween, and an antiferromagnetic thin film arranged adjacent to one of the ferromagnetic thin films. The antiferromagnetic thin film is a superlattice formed of at least two oxide antiferromagnetic materials selected from NiO, NixCo1-xO (0.1</=x</=0.9) and CoO. A biasing magnetic field Hr applied to the one ferromagnetic thin film located adjacent the antiferromagnetic thin film is greater than coercive magnetic force Hc2 of the other ferromagnetic thin film.
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| 申请公布号 |
US5872502(A) |
申请公布日期 |
1999.02.16 |
| 申请号 |
US19950521850 |
申请日期 |
1995.08.31 |
| 申请人 |
NEC CORPORATION |
发明人 |
FUJIKATA, JUN-ICHI;HAYASHI, KAZUHIKO;YAMAMOTO, HIDEFUMI;ISHIHARA, KUNIHIKO |
| 分类号 |
C23C14/08;G01R33/09;G11B5/39;H01F10/08;H01F10/18;H01F10/32;H01F41/30;H01L43/02;H01L43/12;(IPC1-7):H01L43/00 |
主分类号 |
C23C14/08 |
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