| 摘要 |
PURPOSE:To facilitate forming through-holes in flat parts of the first layer wiring by a method wherein the through-holes which connect word lines and the first layer wiring are shifted from bulk contacts of the first layer wiring to the flat parts of the first layer wiring. CONSTITUTION:Word lines W<+> and W<-> are shifted from half cells 10 and 12 so as to prevent through-holes 14, 22 and 24 from overlapping bulk contacts EH, W and W. The direction of the shift is downward, i.e. to the direction of transfer of the word line W<+>, provided on one (10) of the half cells, to the side of the other half cell 12. The shifted word line W<+> is so provided as to be on an isolation region between the half cells 10 and 12 and on a part of the half cell 10. The word line W<-> is also shifted like the word line W<+>. The first layer wiring 16, to which respective emitters of transistors Q3 and Q4 are connected, is also shifted to the same direction and the contact parts EH of the wiring 16 and bulks are made to be of horizontal type. With this constitution, the through-hole 14 can be formed easily while being shifted from the bulk contact EH. |
