发明名称 DISTRIBUTED FEEDBACK TYPE SEMICONDUCTOR LASER
摘要 PURPOSE:To enable a stable single-axis oscillation near a Bragg wavelength by forming a phase shift region by filling the minute gap separating the first region from the second region with a non-conductive medium whose refractive index is larger than 1. CONSTITUTION:A diffraction grating 2 is formed, for example, on an N-InP substrate 1 and further on that, an N-In0.72Ga0.23As0.61P0.39 guide layer 3, an In0.59Ga0.41As0.90P0.10 active layer 4, and a P-Inp clad layer 5 are laminated in that order, followed by mesa etching and buried growth to fabricate DFB-BH LD. The element is mounted on a metal piece 6 of Cu using Au and while fixing it, a knife egde is put on the other end to cleave that and a force is apllied slightly against the metal piece 6 to form a gap 7 of a few mum. Polyimide 8 thinnered by thinner is poured in that gap 7 and the entire unit is baked in dry nitrogen for curing. Consequently, the gap having the medium whose refractive index is larger than 1 can be obtained.
申请公布号 JPS6223186(A) 申请公布日期 1987.01.31
申请号 JP19850162574 申请日期 1985.07.23
申请人 NEC CORP 发明人 KITAMURA MITSUHIRO
分类号 H01S5/00;H01S5/12 主分类号 H01S5/00
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