发明名称 TARGET FOR SPUTTERING
摘要 PURPOSE:To develop a large-sized target which is free from chipping off and cracking in the stage of producing a target for sputtering of an alloy consisting of a transition metal and rare earth element by metallurgically joining the target material onto a metallic substrate. CONSTITUTION:The target formed by metallurgically joining a target alloy 1 by a thermal spraying, build-up welding, hot pressing, hot hydrostatic pressing or brazing method onto a strap plate 2 consisting of high-purity Fe, Ni, Cu, etc., is used as the target for sputtering to be used for forming a thin alloy film of 2-4 elements consisting of the transition metal and rare earth metal by a sputtering method onto the substrate. Such target as a cathode is brazed onto a backing plate 3 and the large-sized target which is free from the chipping off, cracking, etc., during handling and can form the thin film having the uniform compsn. on the substrate is produced.
申请公布号 JPS6220864(A) 申请公布日期 1987.01.29
申请号 JP19850159991 申请日期 1985.07.19
申请人 SHOWA DENKO KK 发明人 KUSAMA FUMIHIKO
分类号 C23C14/14;C23C14/16;C23C14/34 主分类号 C23C14/14
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