| 摘要 |
PURPOSE:To improve electrostatic resistance and to omit a protecting diode or make its configuration compact, by providing a polysilicon layer, which has the equal resistivity as that of a diffused layer, and a taking out electrode. CONSTITUTION:One end of a diffused layer 1 is connected to a taking out electrode 2 of the diffused layer. On the other end of the layer 1, an insulating film 3, which determines the value of capacitance, is provided. A polysilicon layer 4 and a taking out electrode 5 are provided on the film 3. The added value of the resistance values of the layer 4 and the electrode 5 is equal to the resistance value of the diffused layer 1. Since there is no dispersion in the time constant of an MOS capacitor, current concentration is hard to occur, and the electrostatic resistance is improved. Therefore, a protecting diode can be omitted or can be made compact. |
