| 摘要 |
PURPOSE:To facilitate formation of amorphous silicon hydride by the reactive patterning method and to enhance acceptance potential characteristics and phtosensitivity of an electrophotographic sensitive body by controlling the product of the distance between a silicon target and a substrate in a vessel and the reciprocal of mean free path 1/lambda in the vessel to 1-10. CONSTITUTION:A photosensitive layer 2 composed of an amorphous silicon hydride layer 3 containing Se, an amorphous silicon hydride layer 4, and an Si-Nx layer 5 is formed on the conductive substrate 1 of the electrophotographic sensitive body. These layers 3, 4 are used for a photoconductive layer, and the layer 5 is used for a protective layer. At the time of forming the layers 3, 4, the product of the target-substrate distance d(cm) and the reciprocal 1/lambda (cm<-1>) of the mean free path of the molecules in the vessel to 1-10, thus permitting the layer 3 containing Se to be easily formed and acceptance potential and photosensitivity of the photosensitive body to be enhanced. |
