发明名称 |
TECHNIQUES AND CONFIGURATIONS TO IMPART STRAIN TO INTEGRATED CIRCUIT DEVICES |
摘要 |
Embodiments of the present disclosure describe techniques and configurations to impart strain to integrated circuit devices such as horizontal field effect transistors. An integrated circuit device includes a semiconductor substrate, a first barrier layer coupled with the semiconductor substrate, a quantum well channel coupled to the first barrier layer, the quantum well channel comprising a first material having a first lattice constant, and a source structure coupled to the quantum well channel, the source structure comprising a second material having a second lattice constant, wherein the second lattice constant is different than the first lattice constant to impart a strain on the quantum well channel. Other embodiments may be described and/or claimed. |
申请公布号 |
WO2011087609(A3) |
申请公布日期 |
2011.10.27 |
申请号 |
WO2010US58778 |
申请日期 |
2010.12.02 |
申请人 |
INTEL CORPORATION;RADOSAVLJEVIC, MARKO;DEWEY, GILBERT;MUKHERJEE, NILOY;PILLARISETTY, RAVI |
发明人 |
RADOSAVLJEVIC, MARKO;DEWEY, GILBERT;MUKHERJEE, NILOY;PILLARISETTY, RAVI |
分类号 |
H01L29/772;H01L21/335 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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