| 摘要 |
PROBLEM TO BE SOLVED: To form transistors having different threshold, without having to divide an injection process and to make high speed compatible with low power consumption in a semiconductor integrated-circuit device, using an SOI substrate. SOLUTION: A logic circuit, 60 which is formed on the SOI substrate and in which a P-type transistor 51A for computing composed of a low-threshold transistor and an N-type transistor 52 for computing are contained is provided. A power-supply line 61, which supplies a power-supply potential VDD, and an internal power-supply line 62, which supplies an internal power-supply potential VD1 to the logic circuit part 60 via a switching transistor 51B composed of a low-threshold transistor with a body contact are provided. The transistor 51A for computing and the transistor 51B are partially depleted-type transistors whose constitutions are mutually identical. The body contact part of the transistor 51B is connected to a grounding part 64.
|
