| 摘要 |
PURPOSE:To compose a stable and highly reliable wiring with a flat surface by a method wherein a semiconductor layer is formed on an insulating layer having an aperture on a semiconductor substrate and the impurity in the semiconductor layer is introduced into the substrate. CONSTITUTION:A P type source region 2 and a drain region 3 are formed in an N type Si substrate 1. After the formation of an oxide film 4, P type Si is formed by a method like evaporation and electrode patterns 7 thru 9 of the P type Si are formed by selective oxidization with Si3N4 of prescribed patterns. After the removal of Si3N4 being, an oxide film 11 is formed by thermal oxidization. In the method described above, method, the impurity in the P type Si layer is dispersed into the source region 2 and the drain region 3 during the double oxidation, ohmic contact property between the P type Si layer and the regions 2, 3 is improved and the surface of the circuit layer becomes relatively flat. |
