| 摘要 |
PURPOSE:To increase the laser light detecting efficiency and obtain a semiconductor laser device having a reduced size and improved reliability, by forming a laser oscillation section on a flat part of a semiconductor substrate having a step, and forming a light-receiving section on the step. CONSTITUTION:A semiconductor layer 24 having a first conductivity type is formed so as to extend from a laser oscillation section 31 to a light-receiving section 32. An active layer 25 is formed on the semiconductor layer 24 so as to extend from the laser oscillation section 31 to the light-receiving section 32. A clad layer 26 having a second conductivity type in formed at least on the active layer 25a within the laser oscillation section 31. A groove 29 is formed between the laser oscillation section 31 and the light-receiving section 32 so as to reach a thicknesswise part of the semiconductor layer 24. The active layer 25a in the laser oscillation section 31 is flat, while the active layer 25b in the light-receiving section 32 is slanted with respect to a plane including the active layer 25a in the laser oscillation section 31. For example, horizontal surfaces 21, 23 and a slanted surface 22 are formed on an N-InP substrate 20, and a buffer layer 24, an active layer 25 and a clad layer 26 are grown thereon. After electrodes 27 and 28 have been formed, the groove 29 is formed to obtain a semiconductor laser device 30 having the laser oscillation section 31 and the light-receiving section 32. |
