发明名称 |
Pre-exposure method for increased sensitivity in high contrast resist development. |
摘要 |
<p>A high contrast developing process is described for use after pre-exposure to UV-visible radiation to produce increased sensitivity during lithographic processing of positive resists layers. Compared to samples which have not been subjected to the methods of this invention, sensitivity increases of a factor of 2-4 are to be expected. An additional benefit of low film loss from unexposed resist is obtained. The system disclosed is applicable to lithographic exposures utilizing electrons, photons (eg. UV-visible, x-rays, etc.) and atomic or molecular charged particles. Specifically, as a result of the increased sensitivity, higher throughput during lithographic processing for the fabrication of photomasks and semiconductor devices is realized.</p> |
申请公布号 |
EP0209152(A2) |
申请公布日期 |
1987.01.21 |
申请号 |
EP19860109897 |
申请日期 |
1986.07.18 |
申请人 |
PETRACH SYSTEMS, INC. |
发明人 |
OWENS, ROBERT AUSTIN;CHIN, ROLAND LEE;FERGUSON, SUSAN ANTOINETTE;LEWIS, JAMES MARVIN |
分类号 |
G03C5/18;G03F7/20;G03F7/26;G03F7/30 |
主分类号 |
G03C5/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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