发明名称 Charge pump system for non-volatile ram
摘要 A voltage generating system provides a plurality of different voltages for powering a dynamic nonvolatile random access memory (NVRAM) chip. The voltage generating system includes a pair of charge pumps. Each charge pump is coupled to a controller that senses the voltage level at the output of the charge pump and generates an enabling signal when said voltage is at a predetermined value. The signal activates a power down circuit which adjusts the charge pump output to a desired voltage level. A programmable oscillator provides the clocking signals for the controller. The charge pumps and programmable oscillators are periodically deactivated. As a result, the overall power consumption of the chip is reduced.
申请公布号 US4638464(A) 申请公布日期 1987.01.20
申请号 US19830551450 申请日期 1983.11.14
申请人 INTERNATIONAL BUSINESS MACHINES CORP. 发明人 CRANFORD, JR., HAYDEN C.;GARVIN, STACY J.
分类号 H01L27/10;G11C5/00;G11C5/14;G11C11/407;G11C14/00;G11C16/06;G11C17/00;H01L21/822;H01L21/8247;H01L27/04;H01L29/788;H01L29/792;H02M3/07;(IPC1-7):G11C11/24 主分类号 H01L27/10
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