发明名称 |
Charge pump system for non-volatile ram |
摘要 |
A voltage generating system provides a plurality of different voltages for powering a dynamic nonvolatile random access memory (NVRAM) chip. The voltage generating system includes a pair of charge pumps. Each charge pump is coupled to a controller that senses the voltage level at the output of the charge pump and generates an enabling signal when said voltage is at a predetermined value. The signal activates a power down circuit which adjusts the charge pump output to a desired voltage level. A programmable oscillator provides the clocking signals for the controller. The charge pumps and programmable oscillators are periodically deactivated. As a result, the overall power consumption of the chip is reduced.
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申请公布号 |
US4638464(A) |
申请公布日期 |
1987.01.20 |
申请号 |
US19830551450 |
申请日期 |
1983.11.14 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORP. |
发明人 |
CRANFORD, JR., HAYDEN C.;GARVIN, STACY J. |
分类号 |
H01L27/10;G11C5/00;G11C5/14;G11C11/407;G11C14/00;G11C16/06;G11C17/00;H01L21/822;H01L21/8247;H01L27/04;H01L29/788;H01L29/792;H02M3/07;(IPC1-7):G11C11/24 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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