| 摘要 |
PURPOSE:To obtain a diffused layer having a low resistance and a shallow junction by selectively coating a diffused layer region with a high melting point metal film, then accumulating arsenic thereon, and implanting silicon to form a metal silicide in a self-aligning manner. CONSTITUTION:A gate oxide film 3 and a gate electrode 4 are formed on an active region partitioned by a field insulating film 2, a silicon dioxide film is accumulated, the entire semiconductor substrate 1 is etched, a silicon dioxide film 5 remains on the side wall on the electrode 4, with the film 5 as a mask an impurity to form a reverse conductive impurity to the substrate 1 is implanted to form a diffused layer region 6. A tungsten film 7 is selectively coated by a CVD method on the region 6, and an amorphous or polycrystalline silicon film 8 is coated thereon. Then, silicon ions are implanted from above to react the film 8 with the film 7, and heat treated at 650 deg.C to form a tungsten silicide film 9. The remaining film 8 is removed to allow the film 9 to remain only on the region 6. |
